CE+T Power has joined InRel-NPower, a European research project on Innovative Reliable Nitride-based Power Devices and Applications. The project is funded by the European Commission’s Community Research and Development Information Service, CORDIS.
The main objective of this proposal is to develop reliable GaN-based power devices and systems for high and medium power electronics within industrial and automotive applications. This will bring GaN power devices another step closer to wide adoption in the energy saving environment and further tap this new material’s full potential.
This proposal addresses two subjects, one of which is medium power (to 10kW) GaN-on-Si based lateral HEMT structures, with special focus on high reliability, which is still a major barrier to wide-spread market acceptance.
Hence, the impact of the GaN material quality, in combination with the device layout in view of long-term reliability will be addressed.
We used GaN as an innovative component within our tiny inverter that won the Google & IEEE Little Box Challenge. Our role in InRel is therefore to test and perform simulations on GaN in an industrial environment.
CE+T Power has been selected, along with with Siemens, Bosch, ONSemi and EpiGaN, from 85 candidates. Six research centers are also participating in the project:
- University of Padova, Italy, where we already had presented our tiny inverter in 2006
- CNRS, the French public institution for Research and Innovation
- Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany
- University of Ghent, Belgium
- Mie University and Kyushu University, Japan